C2M0080120D电源IC数据表ic资料供应价格-114ic电子网

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C2M0080120D	文件：342.94 Kbytes Page：3 Pages	SiCN-ChannelMOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=80mΩ（TYP.）@VGS=20VTJ=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
C2M0080120D	文件：824.97 Kbytes Page：10 Pages	SiliconCarbidePowerMOSFETC2MTMMOSFETTechnologyN-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity •	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
C2M0080120D	文件：869.12 Kbytes Page：9 Pages	SiliconCarbidePowerMOSFETZ-FETTMMOSFET	CreeCree, Inc 科锐科锐半导体制造商	Cree
C2M0080120D	文件：482.43 Kbytes Page：2 Pages	CREESiliconCarbideMOSFETEvaluationKit Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat	CreeCree, Inc 科锐科锐半导体制造商	Cree

更多C2M0080120D电源IC供应商更新时间2024-9-23 18:02:00