首页 >C2M0080120D>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
C2M0080120D | CREE Silicon Carbide MOSFET Evaluation Kit Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat | CreeCree Inc. 科锐科锐半导体制造商 | Cree | |
C2M0080120D | Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity • | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | |
C2M0080120D | Silicon Carbide Power MOSFET Z-FETTM MOSFET | CreeCree Inc. 科锐科锐半导体制造商 | Cree | |
Silicon Carbide Power MOSFET | CreeCree Inc. 科锐科锐半导体制造商 | Cree |
详细参数
- 型号：
C2M0080120D
- 功能描述：
MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EKOWEISS/艾科维斯 |
22+ |
TO-247-3 |
1000000 |
询价 | |||
CREE |
19+ |
TO247 |
10140 |
询价 | |||
CREE全系列可接受订货 |
23+ |
NA |
9808 |
CREE进口代理原装优势供应全系列可订货QQ1304306553 |
询价 | ||
CREE/科锐 |
2021+ |
TO-247 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
Cree |
23+ |
TO-247 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
询价 | ||
CREE |
2024+实力库存 |
TO-247 |
4 |
只做原厂渠道 可追溯货源 |
询价 | ||
CREE/科锐 |
21+ |
TO-247 |
900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
CREE |
2019 |
TO-247 |
19700 |
INFINEON品牌专业原装优质 |
询价 | ||
CREE |
23+ |
TO-247 |
8970000 |
原厂发货量多价低 18930689907微信同步 QQ893727827 |
询价 | ||
CREE |
21+14+ |
TO-247 |
13 |
只做原装正品 |
询价 |
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