首页 >C2801HA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
WIREWOUNDCOMMONMODEFILTERS | FRONTIER Frontier Electronics | FRONTIER | ||
ELECTRICALLYERASABLEPROGRAMMABLEREADONLYMEMORY | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PFTHydrostaticLevelSensor | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | TTELEC | ||
GR-253-CoreSMC(SONETminimumclock)andITUG.813Option2MinatureSurfaceMountTCXO | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
GR-253-CoreSMC(SONETminimumclock)andITUG.813Option2MinatureSurfaceMountTCXO | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
SBD:SchottkyBarrierDiodeGeneral-PurposeSwitchingDeviceApplications MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smallswitching | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
P-ChannelPowerMOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-ChannelPowerMOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HIGHRELIABILITY,HIGHEFFICIENCYRADIATIONHARDENEDDC-DCCONVERTER | IRF International Rectifier | IRF | ||
HIGHRELIABILITY,HIGHEFFICIENCYRADIATIONHARDENEDDC-DCCONVERTER | IRF International Rectifier | IRF |
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