CEH2362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.3A,RDS(ON)=60mW@VGS=10V. RDS(ON)=74mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEN2362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,3A,RDS(ON)=80mW@VGS=10V. RDS(ON)=100mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CES2362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,3A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2362

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

CHM2362PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

D2362

9-INCHWINCHESTERDISKDRIVEMAINTENANCEMANUAL

DA2362-AL

FlybackTransformer

H2362F

Renesas16-BitSingle-ChipMicrocomputerH8SFamily/H8S/2300Series

LEVG2362-PF

BIPOLARTYPELEDLAMPS

LHG2362-PF

BIPOLARTYPELEDLAMPS