Silicon NPN Power Transistors

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SAVANTIC

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：641.16 Kbytes 页数：4 Pages

CET

华瑞

High Power and current handing capability

文件：279.57 Kbytes 页数：4 Pages

Good-Ark

固锝电子

3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT

文件：3.76643 Mbytes 页数：27 Pages

IRF