N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：641.16 Kbytes 页数：4 Pages

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N Channel Product

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PLLatinum??Low Power Dual Frequency Synthesizer for RF Personal Communications

文件：542.06 Kbytes 页数：22 Pages

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PLLatinum??Low Power Dual Frequency Synthesizer for RF Personal Communications

文件：542.06 Kbytes 页数：22 Pages

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PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：393.19 Kbytes 页数：18 Pages

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国半