零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | |||
Pneumaticmuffler | FESTOFesto Corporation. 费斯托公司德国FESTO费斯托(中国)有限公司 | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
PhotoelectronicSmokedetectorwithElectronicHeatSensing | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | |||
MOSFET20VN-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | |||
N-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | |||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | |||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | |||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO CHENMKO | |||
SOT-23Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MIT |
21+ |
DIP-22 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
MITSUBIS |
23+ |
高频管 |
1050 |
专营高频管模块,全新原装! |
询价 | ||
MITSUBIS |
2022 |
18 |
原厂原装正品,价格超越代理 |
询价 | |||
NEC |
22+ |
DIP |
3378 |
绝对原装公司现货供应!价格优势 |
询价 | ||
NEC |
2020+ |
DIP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
NEC |
20+/21+ |
DIP |
8976 |
全新原装现货,量大价优! |
询价 | ||
MIT |
21+ROHS |
Description |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NEC |
23+ |
DIP |
5177 |
现货 |
询价 | ||
NEC |
2023+ |
DIP |
16800 |
芯为只有原装 |
询价 | ||
NEC |
23+ |
DIP |
12335 |
询价 |
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