| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
Pneumaticmuffler | FESTOFesto Corporation. 费斯托公司德国FESTO费斯托（中国）有限公司 | FESTO | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
PhotoelectronicSmokedetectorwithElectronicHeatSensing | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | SYSTEMSENSOR | ||
MOSFET20VN-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
SOT-23Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIT |
2020+ |
TO220 |
90 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
2022 |
989 |
原厂原装正品,价格超越代理 |
询价 | ||||
MIT |
2022+ |
TO220 |
5000 |
只做原装公司现货 |
询价 | ||
三凌 |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MIT |
23+ |
TO-3 |
27493 |
公司原装现货!主营品牌!可含税欢迎查询 |
询价 | ||
FSC/三菱 |
23+ |
TO-220 |
4810 |
正品原装货价格低qq:2987726803 |
询价 | ||
三凌 |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
三凌 |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
ALLTOP |
23+ |
NA |
90000 |
一定原装深圳现货 |
询价 | ||
ALLTOP |
2102+ |
NA |
6854 |
只做原厂原装正品假一赔十! |
询价 |
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