MMDS / ISM / S-Band Mixer

[Pacific Wireless] Description The C2306 is a flexible, high intercept, frequency conversion GaAs MMIC packaged in a 14 pin SOIC package. The MMIC is usable as an upconverter or downconverter mixer. Each subcircuit is brought out on separate pins to allow for custom filtering on the IF/RF

文件：71.35 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

小信号MOS

ChipNobo

无边界

MMDS / ISM / S-Band Mixer

[Pacific Wireless] Description The C2306 is a flexible, high intercept, frequency conversion GaAs MMIC packaged in a 14 pin SOIC package. The MMIC is usable as an upconverter or downconverter mixer. Each subcircuit is brought out on separate pins to allow for custom filtering on the IF/RF

文件：71.35 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：667.9 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：565.69 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：516.1 Kbytes 页数：5 Pages

CET-MOS

华瑞