C23020.0M

Ultra-Miniature Precision TCXO / VCTCXO

CES2302

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2302

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

CES2302A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CHT2302PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.8Ampere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *

CHT2302WPT

N-ChannelEnhancementModeFieldEffectTransistor

CJ2302

N-ChannelEnhancementModeMOSFET

CJ2302

N-Channel20-V(D-S)MOSFET

CJ2302S

SOT-23Plastic-EncapsulateMOSFETS

CJ2302S

N-Channel20-V(D-S)MOSFET