N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.4A, RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 70mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：672.1 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.8 Ampere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION *

文件：305.65 Kbytes 页数：3 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

文件：323.19 Kbytes 页数：3 Pages

CHENMKO

力勤

N-Channel Enhancement Mode MOSFET

文件：423.04 Kbytes 页数：6 Pages

ZPSEMIZP Semiconductor

至尚臻品