2,200uH, 700mOhm, 0.5Amp Max. DIP Common Mode Chokes

0.47mH to 10.0mH, 0.15Ohm to 4.0Ohm, 1.0Amp to 0.2Amp DIP Common Mode Chokes • 16.5×11.0mm Max.(L×W), 16.5mm Max. Height.\n• Rated current up to 1.0A.\n• Operating Temperature Range -40°C to + 125°C ; RoHs & HF compliance.;

ITG

6,800uH, 1260mOhm, 0.43Amp Max. DIP Common Mode Chokes

3.3mH to 51.0mH, 0.71Ohm to 9.12Ohm, 0.65Amp to 0.15Amp DIP Common Mode Chokes • 18.5×17.0mm Max.(L×W), 23.0mm Max. Height.\n• Rated current up to 0.65A.\n• Operating Temperature Range -40°C to + 125°C ; RoHs & HF compliance.\n;

ITG

8,000uH, 460mOhm, 0.9Amp Max. DIP Common Mode Chokes

1.5mH to 30.0mH, 0.125Ohm to 2.5Ohm, 1.9Amp to 0.4Amp DIP Common Mode Chokes • 22.5×19.0mm Max.(L×W), 27.5mm Max. Height.\n• Inductance range: 1.5mH～30mH .Custom values are welcomed.\n• Rated current up to 1.9A.\n• Ideally used as AC common mode noise filter for TV, VCR, Switching power supply, PC＆PC related advice, measurement attenuation and control unit with better charac;

ITG

RF POWER TRANSISTORS-NPN

RF POWER TRANSISTORS-NPN

文件：40.23 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 36A, RDS(ON) = 9mW @VGS = 4.5V. RDS(ON) = 12mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 16mW @VGS = 1.8V. ESD Protected: 2000 V.

文件：680.35 Kbytes 页数：4 Pages

CET-MOS

华瑞

DIP Switches

文件：328.26 Kbytes 页数：1 Pages

CTS

西迪斯