RF POWER TRANSISTORS-NPN

RF POWER TRANSISTORS-NPN

文件：40.23 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 36A, RDS(ON) = 9mW @VGS = 4.5V. RDS(ON) = 12mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 16mW @VGS = 1.8V. ESD Protected: 2000 V.

文件：680.35 Kbytes 页数：4 Pages

CET-MOS

华瑞

DIP Switches

文件：328.26 Kbytes 页数：1 Pages

CTS

西迪斯

4VA LOW PROFILE ENCAPSULATED TRANSFORMER

文件：226.31 Kbytes 页数：2 Pages

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