10BJ200CA

Marking：C200；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ200CA

Marking：C200；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

IDW20C65D2

Marking：C20ED2；Package：PG-TO247-3；Emitter Controlled Diode Rapid 2 Common Cathode Series

Features: •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge(Qrr) •Lowforwardvoltage(VF)andstableovertemperature •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating •RoHScompliant

TP74LVC2G04C6

Marking：C204；Package：SOT363；DUAL INVERTER GATE

Features »Operationvoltagerange:1.65~5.5 »InputsAcceptVoltagesupto5.5VAllowing DownTranslationtoVCC «£24mAoutputdrive(VCC=3.3V) «LowPowerConsumption,10-pAMaxICC »ESDProtectionExceedsJESD22 ~2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) ~1000-

TP74LVC2G06C6

Marking：C206；Package：SOT363；INVERTERS WITH OPEN-DRAIN OUTPUTS

Features »Operatefrom1.65Vto5.5V «InputandOpen-DrainOutput AcceptVoltagesto5.5V «HighNoiseImmunity »ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) -1000-VCharged-DeviceModel(C101)

TP74LVC2G07C6

Marking：C207；Package：SOT363；BUFFERS WITH OPEN-DRAIN OUTPUTS

Features «WideSupplyVoltageRangeFrom1.65VTo5.5V. InputsCanBeDrivenFromEither 3.3Vor5VDevices. ®+24-mAOutputDriveat3.3V «LowPowerDissipation:Ptot=300mW(Max) »ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) =200-VMachineModel(A115-A) -10

LMSC05N02A

Marking：C205；Package：SOT-23-6L；N and P-Channel Enhancement Mode Power MOSFET