Audio Frequency Amplifier & High Frequency OSC

Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

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TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

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TOSHIBA

东芝

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * complimentary to 2SA1015

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UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

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HSMC

华昕

NPN Plastic-Encapsulate Transistors

文件：320.19 Kbytes 页数：2 Pages

WEITRON

NPN SILICON TRANSISTOR

文件：168.25 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

NPN Plastic Encapsulated Transistor

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

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SECOS

喜可士

丝印：HF；Package：SOT-23；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

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KOOCHIN

灏展电子

Power dissipation

TRANSISTOR (NPN) FEATURES ● Power dissipation

文件：1.69813 Mbytes 页数：2 Pages

DGNJDZ

南晶电子