C10A50Z4

RF LDMOS Wideband Integrated Power Amplifiers

TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon−chip matchingthatmakesitusablefrom575to1300MHz.Thismulti−stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features •On−chipmatching(50ohminput,D

C10A50Z4

2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features AdvancedHighPerformanceIn-PackageDoherty GreaterNegativeGate-SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems

C10A50Z4

Airfast RF Power GaN Transistor

1Generaldescription This85WasymmetricalDohertyRFpowerGaNtransistorisdesignedforcellularbasestationapplicationsrequiringverywideinstantaneousbandwidthcapabilitycoveringthefrequencyrangeof1930to1995MHz. Thispartischaracterizedandperformanceisguaranteedforap

C10A50Z4

Surface Mount Termination

C10A50Z4

Surface Mount Termination

C10A50Z4

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

C10A50Z4

RF Power GaN Transistor

C10A50Z4

RF Power GaN Transistor

C10A50Z4

RF Power GaN Transistor

C10A50Z4

RF Power GaN Transistor