RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features • On−chip matching (50 ohm input, D

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2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features  Advanced High Performance In- Package Doherty  Greater Negative Gate- Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：438.23 Kbytes 页数：16 Pages

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Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

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Surface Mount Termination

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ANAREN

Surface Mount Termination

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ANAREN

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：221.53 Kbytes 页数：10 Pages

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RF Power GaN Transistor

文件：364.45 Kbytes 页数：8 Pages

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RF Power GaN Transistor

文件：374.42 Kbytes 页数：8 Pages

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RF Power GaN Transistor

文件：221.31 Kbytes 页数：8 Pages

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RF Power GaN Transistor

文件：344.75 Kbytes 页数：8 Pages

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