RF LDMOS Wideband Integrated Power Amplifiers

文件：739.07 Kbytes 页数：20 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：542.29 Kbytes 页数：16 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

恩XP

Ceramic, Commercial-(CxxxxC), 0.01 uF, 10, 50 V, 0805, X7R, SMD, MLCC, Temperature Stable, Class II

文件：71.45 Kbytes 页数：1 Pages

KEMETKEMET Corporation

基美

Ceramic Capacitors

Kemet

基美