Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

恩XP

Ceramic, Commercial-(CxxxxC), 0.01 uF, 10, 50 V, 0805, X7R, SMD, MLCC, Temperature Stable, Class II

文件：71.45 Kbytes 页数：1 Pages

KEMETKEMET Corporation

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Ceramic Capacitors

Kemet

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Ceramic, Commercial-(CxxxxC), 0.01 uF, 10, 50 V, 0805, X7R, SMD, MLCC, Temperature Stable, Class II

文件：71.58 Kbytes 页数：1 Pages

KEMETKEMET Corporation

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ESD SMD Auto X7R, Ceramic, Electro Static Discharge, 0.01 uF, 10, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade, 0805

文件：63.05 Kbytes 页数：1 Pages

KEMETKEMET Corporation

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ESD SMD Comm X7R, Ceramic, Electro Static Discharge, 0.01 uF, 10, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Electro Static Discharge, Class II, 0805

文件：62.8 Kbytes 页数：1 Pages

KEMETKEMET Corporation

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