丝印：C08；Package：SOT-753；2-input AND gate

DESCRIPTION The 74AHC1G/AHCT1G08 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G08 provides the 2-input AND function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exce

文件：75 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：C08；Package：SOT-753；2-input AND gate

General description 74AHC1G08 and 74AHCT1G08 are high-speed Si-gate CMOS devices. They provide a 2-input AND function. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

文件：77.68 Kbytes 页数：11 Pages

恩XP

丝印：C08；Package：SOT-753；2-input AND gate

General description 74AHC1G08 and 74AHCT1G08 are high-speed Si-gate CMOS devices. They provide a 2-input AND function. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

文件：63.22 Kbytes 页数：6 Pages

恩XP

丝印：C08；Package：SC-74A；2-input AND gate

1. General description The 74AHC1G08; 74AHCT1G08 is a single 2-input AND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Wide supply voltage range from 2.0 to 5.5 V • Overvoltage toler

文件：210.98 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C08；Package：SC-74A；2-input AND gate

1. General description The 74AHC1G08-Q100; 74AHCT1G08-Q100 is a single 2-input AND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (AEC) standa

文件：209.37 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C08；Package：SOT765-1；Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

文件：196.45 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C08；Package：SOT505-2；Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

文件：196.45 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C08；COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL TRANSISTORS in SOT563

Features - Epitaxial Planar Die Construction - Built-In Biasing Resistors - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3)

文件：311.1 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：C08；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 320~450 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two bidirectional I/O lines Working voltage:3.3~36V Low clamping voltage Low leakage current IEC61000-4-2(ESD) ±30kV (air), ±30kV (contact) :3.3V~15V IEC61000-4-2(ESD) ±25kV (air), ±20kV (contact) :18V~36V IEC61000-4-4 (E

文件：2.4821 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：C08；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 320~450 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two bidirectional I/O lines Low Clamping Voltage Working Voltages: 3.3V~36V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2 (ESD) ±30kV (air), ±30k

文件：2.48707 Mbytes 页数：4 Pages

UNSEMI

优恩半导体