Heterojunction Bipolar Transistor (InGaP HBT)

0--6000 MHz, 18.5 dB 15 dBm InGaP HBT GPA The MMG3008NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：388.72 Kbytes 页数：14 Pages

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：493.8 Kbytes 页数：15 Pages

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Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：181.51 Kbytes 页数：9 Pages

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose

文件：640.44 Kbytes 页数：17 Pages

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

0--6000 MHz, 15.5 dB 20.5 dBm InGaP HBT GPA The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 t

文件：389.12 Kbytes 页数：14 Pages

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InGaP HBT Linear Amplifier

1 General description The MMZ25333B is a versatile 3−stage power amplifier targeted at driver and pre−driver applications for macro and micro base stations and final−stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing g

文件：353.89 Kbytes 页数：23 Pages

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CERAMIC CHIP/STANDARD

文件：39.9 Kbytes 页数：2 Pages

KEMETKEMET Corporation

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RF Power Field Effect Transistors

文件：916.42 Kbytes 页数：21 Pages

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SMD Comm X7R, Ceramic, 0.01 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Class II, 0603

文件：60.34 Kbytes 页数：1 Pages

KEMETKEMET Corporation

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