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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
C0603C103J5R	文件：686.34 Kbytes Page：20 Pages	RF LDMOS Wideband Integrated Power Amplifiers	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：460.82 Kbytes Page：21 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3004NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：413.92 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,15dB18dBmInGaPHBTGPA TheMMG3009NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：403.42 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000MHz,20dB20.5dBmInGaPHBT TheMMG3013NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreque	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：416.05 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,15dB15dBmInGaPHBTGPA TheMMG3011NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：478.77 Kbytes Page：24 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) 400--2400MHz,17.5dB33dBmInGaPHBTGPA TheMMG3006NT1isageneralpurposeamplifierthatisinternallyinputprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom400to2400M	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：456.37 Kbytes Page：20 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3005NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：364.07 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor (InGaP HBT) 0-6000MHz,15dB17dBmInGaPHBT TheMMG3010NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000MH	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：438.37 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,19dB16dBmInGaPHBTGPA TheMMG3007NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：423.6 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) 0-6000MHz,19dB18.5dBmInGaPHBTGPA TheMMG3012NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：403.12 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,18.5dB15dBmInGaPHBTGPA TheMMG3008NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：388.72 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：493.8 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：181.51 Kbytes Page：9 Pages	Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：640.44 Kbytes Page：17 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3003NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurpose	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：389.12 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000MHz,15.5dB20.5dBmInGaPHBTGPA TheMMG3015NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0t	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：916.42 Kbytes Page：21 Pages	RF Power Field Effect Transistors	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
C0603C103J5RAC	文件：39.9 Kbytes Page：2 Pages	CERAMIC CHIP/STANDARD	KEMETKEMET Corporation 基美基美公司	KEMET
C0603C103J5RAC7411	文件：60.34 Kbytes Page：1 Pages	SMD Comm X7R, Ceramic, 0.01 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Class II, 0603	KEMETKEMET Corporation 基美基美公司	KEMET
C0603C103J5RACAUTO	文件：60.81 Kbytes Page：1 Pages	SMD Auto X7R, Ceramic, 0.01 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Automotive Grade, 0603	KEMETKEMET Corporation 基美基美公司	KEMET

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详细参数

型号：
C0603C103J5R
功能描述：
多层陶瓷电容器MLCC - SMD/SMT 50volts 0.01uF 5% X7R
RoHS：
否
制造商：
American Technical Ceramics(ATC)
电容：
10 pF
容差：
1 %
电压额定值：
250 V
温度系数/代码：
C0G(NP0) 外壳代码 -
in：
0505 外壳代码 -
mm：
1414
工作温度范围：
- 55 C to + 125 C
产品：
Low ESR MLCCs
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市深创辉科技有限公司	C0603C103J5RAC7867	KEMET			15000	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市利加科技有限公司	C0603C103J5RAC7867	KEMET	16+	NA	8800	原装现货,货真价优	询价
深圳市一线半导体有限公司	C0603C103J5RAC7411				4000		询价
深圳市永贝尔科技有限公司	C0603C103J5RAC	KEMET	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市鼎盛源芯科技有限公司	C0603C103J5RACTU	原厂	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
上海金庆电子技术有限公司	C0603C103J5RAC7867	KEMET	新		37600	全新原装货期两周	询价
深圳市伟胜微电子有限公司	C0603C103J5RAC7411		18+	0603c	999999	进口全新原装现货	询价
深圳市振宏微科技有限公司	C0603C103J5RACTU	KEMET	23+	NA	3668	专做原装正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	C0603C103J5RAC7533	KEMET	1836+	SMD	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市纳立科技有限公司	C0603C103J5RAC	KEMET	三年内		1983	纳立只做原装正品13590203865	询价

更多C0603C103J5R供应商更新时间2024-6-10 14:33:00

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