MSL0601RGBU

SmallandhighBrightnessside-viewRGBLED

N0601N

N-CHANNELMOSFETFORSWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) •Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) •Hig

N0601N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PF0601

SMTPOWERINDUCTORSShieldedDrumCore