N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

文件：218.67 Kbytes 页数：8 Pages

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N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

文件：218.67 Kbytes 页数：8 Pages

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N-CHANNEL MOSFET FOR SWITCHING

文件：218.67 Kbytes 页数：8 Pages

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Nch Single Power Mosfet 60V 100A 4.2Mohm To-263

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. • Low on-state resistanceRDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)\n• Low input capacitanceCiss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)\n• High currentID(DC) = ±100 A\n• RoHS Compliant;

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