8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit

Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Featu

文件：251.89 Kbytes 页数：10 Pages

NANOAMP

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit

Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Featu

文件：251.89 Kbytes 页数：10 Pages

NANOAMP

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit

Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Featu

文件：251.89 Kbytes 页数：10 Pages

NANOAMP

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit

ONSEMI

安森美半导体

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit

Overview\nThe N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to\nprovide both high-speed performance and ultra-low power. • Single Wide Power Supply Range\n  1.65 to 2.2 Volts\n• Very low standby current\n  0.5µA at 1.8V (Typical)\n• Very low operating current\n  1.0mA at 1.8V and 1µs (Typical)\n• Very low Page Mode operating current\n  0.5mA at 1.8V and 1µs (Typical)\n• Simple memory control\n  Dual Chip Enables (CE1a;

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