N08L1618C2AB2中文资料NANOAMP数据手册PDF规格书

Overview

The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low power.

Features

• Single Wide Power Supply Range

1.65 to 2.2 Volts

• Very low standby current

0.5µA at 1.8V (Typical)

• Very low operating current

1.0mA at 1.8V and 1µs (Typical)

• Very low Page Mode operating current

0.5mA at 1.8V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.2V

• Very fast output enable access time

25ns OEaccess time

• Very fast Page Mode access time

tAAP = 25ns

• Automatic power down to standby mode

• TTL compatible three-state output driver