AZ1013-04C

Marking：C08XY；Package：SC70-5L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDProtectforLow-VoltageDifferential Signaling(LVDS)channels
ProtectsfourI/Olines
ProvideESDprotectionforeachchannelto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)15A(8/20μs)
Foroperatingvoltageof

AZC002-02N

Marking：C04XY；Package：SOT143-4L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDProtectfor2high-speedI/Ochannels
ProvideESDprotectionforeachchannelto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)(5/50ns)Level-3,20AforI/O, 40AforPower IEC61000-4-5(Lightning)6A(8/20μs)
5Voperatingvoltage
Lowcapacitance

AZC002-04S

Marking：C02XY；Package：SOT23-6L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDProtectfor4high-speedI/Ochannels
ProvideESDprotectionforeachchannelto IEC61000-4-2(ESD)±17kV(air),±12kV(contact) IEC61000-4-4(EFT)(5/50ns)Level-3,20AforI/O, 40AforPower IEC61000-4-5(Lightning)6A(8/20μs)
5Voperatingvoltage
Lowcapacitance

AZC015-04C

Marking：C05XY；Package：SC70-6L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDProtectfor4high-speedI/Ochannels
ProvideESDprotectionforeachchannelto IEC61000-4-2(ESD)±18kV(air),±14kV(contact) IEC61000-4-4(EFT)(5/50ns)Level-3,20AforI/O, 80AforPower IEC61000-4-5(Lightning)6.5A(8/20μs)
Forbelow5Voperatingvoltage
Low

BCM847QAS

Marking：C010；Package：DFN1010B-6；45 V, 100 mA NPN/NPN matched double transistors

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.37mm •Currentgainmatching •Base-emittervoltagematching •Application-optimizedpinout •AEC-Q101qualified

BCM857QAS

Marking：C011；Package：DFN1010B-6；45 V, 100 mA PNP/PNP matched double transistors

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.37mm •Currentgainmatching •Base-emittervoltagematching •Application-optimizedpinout •AEC-Q101qualified

BL2300

Marking：C009T；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

FEATURES -VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0A -VDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0A -VDS=20V,,RDS(ON)=75m@VGS=1.8V,ID=1.0A APPLICATIONS -PowerManagementinNotebook. -PortableEquipment. -BatteryPoweredSystem. -LoadSwitch. -DSC.

CAT24C04YI-GT3

Marking：C04K；Package：TSSOP-8；EEPROM Serial 2/4/8/16Kb I2C

Description TheCAT24C01/02/04/08/16are1−Kb,2−Kb,4−Kb,8−Kband16−KbrespectivelyCMOSSerialEEPROMdevicesorganizedinternallyas8/16/32/64and128pagesrespectivelyof16byteseach. AlldevicessupportboththeStandard(100kHz)aswellasFast(400kHz)I2Cprotocol.Dataiswritt

CAT24C08YI-GT3

Marking：C04K；Package：TSSOP-8；EEPROM Serial 2/4/8/16Kb I2C

Description TheCAT24C01/02/04/08/16are1−Kb,2−Kb,4−Kb,8−Kband16−KbrespectivelyCMOSSerialEEPROMdevicesorganizedinternallyas8/16/32/64and128pagesrespectivelyof16byteseach. AlldevicessupportboththeStandard(100kHz)aswellasFast(400kHz)I2Cprotocol.Dataiswritt

CH412K

Marking：C074W；Package：SOT363；Low Capactiance 4-Line TVS Array

Features #Ultralowcapacitance:0.3pFtypical(IOtoI/O) #Ultralowleakage:nAlevel Lowoperatingvoltage:5V. #Lowclampingvoltage #Upto4datainesandonepowerlineprotects #Complieswithfollowingstandards: ~IEC610004-2(ESD)immunitytest Aidischarge:425k Contactdis