TPS389C0300CRTERQ1

Marking：C030Q；Package：WQFN；TPS389C03-Q1 Multichannel Overvoltage and Undervoltage I2C Programmable Voltage Supervisor and Monitor with Q&A Watchdog

1Features •ASIL-Dfunctionalsafety-compliant –DocumentationtoaidISO26262systemdesign –SystematiccapabilityuptoASILD –HardwarecapabilityuptoASILD •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto+125°C –DeviceHBMESDclassificati

TTC004B

Marking：C004B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

(1)Highcollectorvoltage:VCEO=160V(min) (2)ComplementarytoTTA004B (3)Smallcollectoroutputcapacitance:Cob=12pF(typ.) (4)Hightransitionfrequency:fT=100MHz(typ.)

TTC008

Marking：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications •High-SpeedHigh-VoltageSwitching •SwitchingVoltageRegulators •High-SpeedDC-DCConverters Features (1)Highcollector-emittervoltage:VCEO=285V,VCES=600V (2)HighDCcurrentgain:hFE=100to200(IC=0.3A) (3)Excellentswitchingtimes:tf=0.1μs(typ.)

TTC011B

Marking：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •Audio-FrequencyAmplifiers Features (1)Highcollectorvoltage:VCEO=230V(min) (2)Smallcollectoroutputcapacitance:Cob=20pF(typ.) (3)Hightransitionfrequency:fT=100MHz(typ.) (4)ComplementarytoTTA006B

TTC014

Marking：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications •High-SpeedHigh-VoltageSwitching •SwitchingVoltageRegulators •High-SpeedDC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(IC=0.1A) (2)Highcollectorbreakdownvoltage:VCEO=800V,VCBO=900V (3)High-speedswitching:tr=0.2μs(typ.),

TTC015B

Marking：C015B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A) (4)ComplementarytoTTA008B

TTC016

Marking：C016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=400to1000(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.22V(max)(IC=1.6A,IB=32mA) (3)High-speedswitching:tf=95ns(typ.)

TTC017

Marking：C017；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=180to450(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A)

74AHCT1G00GV

Marking：C00；Package：SOT-753；2-input NAND gate

74AHCT1G00GV-Q100

Marking：C00；Package：SOT753；2-input NAND gate