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FDB5690

60VN-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(o

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB5690

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=27mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD5690

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD5690

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=30A@TC=25℃ DrainSourceVoltage-VDSS=60V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD5690

60VN-ChannelPowerTrench짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD5690

60VN-ChannelPowerTrench??MOSFET

60VN-ChannelPowerTrench®MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP5690

60VN-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(o

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS5690

60VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •7A,60V.RDS(on)=0.028Ω@VGS=10VRDS(on)=0.0

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KDB5690

N-ChannelPowerTrenchTMMOSFET

Features ●32A,60V.RDS(ON)=0.027Ω@VGS=10V RDS(ON)=0.032Ω@VGS=6V ●CriticalDCelectricalparametersspecifiedat elevatedtemperature. ●Ruggedinternalsource-draindiodecaneliminatethe needforanexternalZenerdiodetransientsuppressor.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

LA5690D

VoltageRegulatorDriverwithWatchdogTimer

Overview TheLA5690isasingle-chipvoltageregulatorformicrocomputersystemmonitorusethatperformsthefunctionsof5Voutputvoltagecontrol,watchdogtimer,andvoltagedetector.TheLA5690usesaminimumnumberofpartstoprovidethebasicfunctions. Features •AnexternalPNPtransi

SANYOSanyo Semicon Device

三洋三洋电机株式会社

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