THREE DIGITS DISPLAY

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ETCList of Unclassifed Manufacturers

未分类制造商

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag

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MOTOROLA

摩托罗拉

Schottky Barrier Diode

Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NTE

Two Channel Direct Drive Speech Controller?

INTRODUCTION SNC553 is a two-channel voice synthesizer IC with PWM direct drive circuit. It built-in a 4-bit tiny controller with one 4-bit input port and two 4-bit I/O ports. By programming through the tiny controller in SNC553, user’s varied applications including voice section combination, key

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SONIX

松翰科技