BZV55C9V1

ZENERDIODES

FEATURE ♦Lowzenerimpedance ♦Lowregulationfactor ♦Glasspassivatedjunction ♦Hightemperaturesolderingguaranteed:260°C/10Satterminals

BZV55C9V1

BZV55C-SERIESSILICONPLANARZENERDIODES

FEATURES ◆Totalpowerdissipation:max.500mW ◆Twotoleranceseries:±2andapprox.±5 Standardtolerance:approx.±5(refertobelowzenervoltage range);±2toleranceavailableonrequest.

BZV55C9V1

500mWZenerDiode2.0to75Volts

Features •Smallsurfacemountingtype •Highreliability •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation)

BZV55C9V1

5ToleranceSMDZenerDiode

BZV55C9V1

SURFACEMOUNTSILICONZENERDIODES

BZV55C9V1

SealedGlassZenerVoltageRegulators

FEATURES •ZenerVoltageRange2.0to75Volts •Mini-MELFPackage •SurfaceDeviceTypeMounting •HermeticallySealedGlass •CompressionBondedConstruction •AllExternalSurfacesAreCorrosionResistantAnd TerminalsAreReadilySolderable •MatteTin(Sn)TerminalFinish •Color

BZVSLASHZMM55C9V1

ZENERDIODES

Features Lowzenerimpedance Lowregulationfactor Glasspassivatedjunction Hightemperaturesolderingguaranteed: 260C/10Satterminals

BZX55C9V1

TECHNICALSPECIFICATIONSOFGLASSSILICONZENERDIODES

FEATURES *VoltageRange:2.4Vto39V *Doubleslugtypeconstruction

BZX55C9V1

0.5WSILICONPLANARZENERDIODES

FEATURES .ThezenervoltagearegradedaccordingtotheinternationalE24standard.Othervoltagetoleranceandhigherzenervoltageonrequest.

BZX55C9V1

500mWZENERDIODE

Features •VerySharpReverseCharacteristic •LowReverseCurrentLevel •VeryHighStability •LowNoise