首页 >BX8020半导体材料>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
T1/E1ExtendedTemperatureRangeSMDSingleTransformers | FILTRAN FILTRAN Group | FILTRAN | ||
NavigationControllerUnit(NCU) | SONARDYNESonardyne sound in depth Sonardyne sound in depth | SONARDYNE | ||
Snap-actingMomentaryPushbuttonSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
RadialLeadThermalCutoff | NTE NTE Electronics, Inc | NTE | ||
Snap-actingMomentaryPushbuttonSwitches Features/Benefits •Positivetactilefeel •Multi-positionsavailable •Widevarietyofterminationoptions •Epoxyterminalsealcompatiblewithbottomwashcleaning •RoHScompliantmodelsavailable TypicalApplications •Instrumentation •Computerperipherals •Telecommunicationsequ | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
BusBarWire,#20SolTC ProductDescription BusBarWire,20AWG(Solid)TinnedCopper,QQ-W-343G | BELDEN Belden Inc. | BELDEN | ||
Track-on-GlassLaserSensor | Pixart原相科技股份有限公司 原相科技 | Pixart | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
3.3V/5VECL2-InputDifferentialXOR/XNOR Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features •250psTypicalPropagationDelay •MaximumFrequency>3GHzTypical •PECLModeOpera | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
8-LineEMIFilterwithIntegratedESDProtection GeneralDescription TheAOZ8020isan8-linedeviceintegratingEMIfilteringwithESDprotectionforeachline.ItisdesignedtosuppressunwantedEMI/RFIsignalsandprovideelectrostaticdischarge(ESD)protectioninportableelectronicequipment.Thisstate-of-the-artdeviceutilizesAOSl | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | ADPOW |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
23+ |
SMD |
6000 |
BOM配单--可开发票16%一回收工厂库存 |
询价 | ||
ROHM |
18+ |
ZIP5 |
999999 |
进口全新原装现货 |
询价 | ||
罗姆 |
23+ |
原厂原装 |
1001 |
专业优势供应 |
询价 | ||
23+ |
N/A |
45990 |
正品授权货源可靠 |
询价 | |||
N/A |
2023+ |
ZIP-7 |
8700 |
原装现货 |
询价 | ||
INTEL/英特尔 |
21+ |
65200 |
询价 | ||||
INTEL/英特尔 |
2022+ |
7300 |
原装现货 |
询价 | |||
INTEL/英特尔 |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
PULSE |
432 |
SOP8 |
3300 |
全新原装绝对自己公司现货特价! |
询价 | ||
PULSE |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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