8-Line EMI Filter with Integrated ESD Protection

General Description The AOZ8020 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge (ESD) protection in portable electronic equipment. This state-of-the-art device utilizes AOS l

文件：343.63 Kbytes 页数：7 Pages

AOSMD

万国半导体

8-Line EMI Filter with Integrated ESD Protection

General Description\nThe AOZ8020 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge (ESD) protection in portable electronic equipment. This state-of-the-art device utilizes AOS leadi • 8 lines for EMI filtering and ESD protection:\n   – Exceeds IEC 61000-4-2, level 4 (ESD) immunity test\n   – ±20kV (air discharge) and ±20kV (contact discharge)\n• Trench Vertical Structure [TVS]2 ™ based technology used to achieve excellent ESD clamping & filter performance over the full operatin;

AOS

美国万代

Package：16-UFDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：滤波器 EMI/RFI 滤波器（LC，RC 网络） 描述：FILTER RC(PI) 100 OHM/9PF SMD

Alpha \u0026 Omega Semiconductor Inc.

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a

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ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

文件：263.64 Kbytes 页数：5 Pages

Microsemi

美高森美

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 33A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · PFC Circuits · Power Supplies

文件：537 Kbytes 页数：3 Pages

ISC

无锡固电