C2719

Photosensoramplifier

Current-to-voltageconversionamplifierforamplifyingweakphotocurrentwithlownoise C2719isacurrent-to-voltageconversionamplifierusedtoamplifyweakphotocurrentfromaphotodiodewithverylownoise.Threerangesofphotocurrentdetectionsensitivitylevel(H,M,L)areselectable

CXD2719Q

Single-ChipDolbyProLogicSurroundDecoder

Description TheCXD2719QisaCMOSLSIdevelopedforDolbyProLogicSurround.ASRAMforshortdelayandAD/DAconvertersarebuiltin,andallfunctionsnecessaryforDolbyProLogicSurroundsuchasanadaptivematrix,apassivedecoderincludingBNR,autoinputbalance,anoisesequenceran

NJM2719

LowNoise,High-SpeedDualOperationalAmplifier

PM-DB2719

DATABUSINTERFACETRANSFORMERSLOWPROFILESINGLE/DUAL

PXIS-2719A

19-Slot3UPXIChassiswithAC

PXIS-2719A

19-Slot3UPXIChassiswithAC

TCD2719DG

TOSHIBACCDLinearImageSensorCCD

TheTCD2719DGisahighsensitiveandlowdarkcurrent7300 elements3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7300elements3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply.

TLP2719

PhotocouplersInfraredLED&PhotoIC

Applications •IntelligentPowerModuleSignalIsolation •FactoryAutomation(FA) •IndustrialInverters General TheTLP2719consistsofahigh-outputinfraredLEDcoupledwithahigh-gain,high-speedphotodetector.Itis housedintheSO6Lpackage. Thisproductcanbemountedonthesa

TZ2719A

CrystalUnitSMD2.5x2.026.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ2719B

CrystalUnitSMD2.5x2.026.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwireless

UPA2719AGR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2719AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotection circuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=20.9mΩMAX.(VGS

UPA2719GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2719GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=20.9mΩMAX.(VGS=−4.5

UPA2719GR

SWITCHINGP-CHANNELPOWERMOSFET