丝印：BW；Package：SOT-416；Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：80.68 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：BW；Package：SOT-523；LOW FREQUENCY TRANSISTOR

FEATURES ● A collceter current is large. ● Collecter saturation voltage is low. VCE(sat)≤250mV At IC=-200mA/IB=-10mA APPLICATIONS ● For switching,for muting.

文件：169.72 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：BW；Package：SOT-416；Low frequency transistor

Features 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. 　 VCE(sat)≦250mA 　 at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.62125 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：BW；Package：VMT3；Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：80.68 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：BW；Package：SOT-346；Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：80.68 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：BW；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity

文件：1.48222 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BW；Package：SC59；TWO-WIRE AUTOMOTIVE HALL SWITCHES INTEGRATED SELF-DIAGNOSTICS

Features  Unipolar: AH3241Q, AH3242Q, AH3243Q, AH3244Q  Latch: AH3280Q, AH3281Q, AH3282Q  Output Polarity:  Direct: AH3242Q, AH3243Q  Inverted: AH3241Q, AH3244Q  Wide Supply Voltage Operation: 2.7V to 27V  Temperature Coefficient -1100ppm/°C (AH3242Q, AH3243Q, AH3244Q)  Chopper St

文件：1.68748 Mbytes 页数：19 Pages

DIODES

美台半导体

丝印：BW；Package：SOT-563；SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES

FEATURES • Smallest 100V Dual, isolated Schottky diode currently available • Lead free in compliance with EU RoHS 2.0 • Green molding compound as per IEC 61249 standard

文件：329.79 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：BW；Package：HUSON3；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BW；Package：SOT1061；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

文件：250.7 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司