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型号：2SA2018；Package：SOT-416；Low frequency transistor

Features 1)Highcurrent. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mAatIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

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型号：2SA2018；Package：SOT-523；LOW FREQUENCY TRANSISTOR

FEATURES ●Acollcetercurrentislarge. ●Collectersaturationvoltageislow. VCE(sat)≤250mVAtIC=-200mA/IB=-10mA APPLICATIONS ●Forswitching,formuting.

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型号：2SA2018E3HZG；Package：SOT-416；Low frequency transistor

Features 1)Acollectorcurrentislarge. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mA atIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

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型号：2SA2030；Package：VMT3；Low frequency transistor

Features 1)Highcurrent. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mAatIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

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型号：2SA2119K；Package：SOT-346；Low frequency transistor

Features 1)Highcurrent. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mAatIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

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型号：2SD1005；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES SmallFlatPackage HighBreakdownVoltage ExcellentDCCurrentGainLinearity

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型号：AH3280Q；Package：SC59；TWO-WIRE AUTOMOTIVE HALL SWITCHES INTEGRATED SELF-DIAGNOSTICS

Features Unipolar:AH3241Q,AH3242Q,AH3243Q,AH3244Q Latch:AH3280Q,AH3281Q,AH3282Q OutputPolarity: Direct:AH3242Q,AH3243Q Inverted:AH3241Q,AH3244Q WideSupplyVoltageOperation:2.7Vto27V TemperatureCoefficient-1100ppm/°C (AH3242Q,AH3243Q,AH3244Q) ChopperSt

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型号：BAS100ATB6；Package：SOT-563；SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES

FEATURES •Smallest100VDual,isolatedSchottkydiodecurrentlyavailable •LeadfreeincompliancewithEURoHS2.0 •GreenmoldingcompoundasperIEC61249standard

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型号：BC53-10PA；Package：HUSON3；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

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型号：BC53-10PA-Q；Package：SOT1061；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinanultrathinSOT1061leadlesssmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalan