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3632

VDSLModule

BournsBourns Inc.

伯恩斯(邦士)

AW3632

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

AW3632DNR

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

BA3632K

Pre/poweramplifierfor1.5Vheadphonestereos

TheBA3632Kisadual-channelpre/powersystemICdesignedfor1.5Vheadphonestereos.ThereisnoneedforDC/DCconversion,andthesystemcanoperateoffasinglebattery.TheICdrawslowcurrent(ICC=2.6mA)toallowlongsetlife. Features 1)Dualpre-amplifierswithautoreversecompat

ROHMRohm Semiconductor

罗姆罗姆半导体集团

C3632

1700WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux42TEx226mm •Weight:10kg

POWERBOX

Powerbox manufactures

DS3632

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DS3632

CMOSDualPeripheralDrivers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

DS3632N

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

E3632A

ProgrammableDCPowerSupplies

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

E3632S

2C12SOLIDBCFLEXOASFLEXFireAlarm/LifeSafetyCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

FDB3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FDB3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
ACR
23+
1688
房间现货库存:QQ:373621633
询价
23+
SOP
169
现货供应
询价
EXPLORE
21+
LQFP128
50000
全新原装正品现货,支持订货
询价
EXPLORE
18+
LQFP128
1642
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
EXPLORE
18+
LQFP128
1742
全新原装 实单必成
询价
EXPLORE
22+
QFP
50000
只做原装正品现货 欢迎来电查询15919825718
询价
Semitehelec
2225+
SOD-323
5897
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Semitehelec
589220
16余年资质 绝对原盒原盘 更多数量
询价
Semitehelec
2023+
SOD-323
700000
柒号芯城跟原厂的距离只有0.07公分
询价
Semitehelec
24+
SOD-323
9000
只做原装正品 有挂有货 假一赔十
询价
更多BV3632K供应商 更新时间2024-5-18 10:30:00