isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：332.95 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：83.26 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.65971 Mbytes 页数：10 Pages

INFINEON

英飞凌

5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET

Renesas

瑞萨

N CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORS

NJS

Transistor

Comset