14A, 50V, 0.100 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This ty • 14A, 50V\n• rDS(ON) = 0.100Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

ONSEMI

安森美半导体

Trans MOSFET N-CH 50V 17A 3-Pin(3+Tab) TO-220

NJS

新泽西半导体

Transistor

Comset