isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：332.91 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 50V - 0.1W - 13A TO-220 STripFET] POWER MOSFET

■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIER

文件：79.23 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：324.38 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 5.0V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：323.57 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：128.38 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：324.36 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 5.0V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：333.26 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：129.21 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：130.82 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：333.53 Kbytes 页数：2 Pages

ISC

无锡固电