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文件：171.79 Kbytes 页数：6 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：86.29 Kbytes 页数：8 Pages

SIEMENS

西门子

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：90.14 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：910.22 Kbytes 页数：8 Pages

INFINEON

英飞凌

SOA is Power Dissipation Limited

文件：47.32 Kbytes 页数：2 Pages

ISC

无锡固电

19A, 100V, 0.100 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This ty • 19A, 100V\n• rDS(ON) = 0.100Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

Renesas

瑞萨

MOSFET

NJS

新泽西半导体

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌