SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

文件：110.92 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

文件：120.03 Kbytes 页数：8 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：118.39 Kbytes 页数：9 Pages

SIEMENS

西门子

N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET

■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIER

文件：80.18 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Avalanche rugged technology

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) • Avalanche rugged technology • High current capability • 175℃ Operating Temperature APPLICATIONS • High current,high speed switching • Solenoid and relay drivers • Regulators • DC-DC & DC-AC converters

文件：66.86 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) @ VGS= 5.0V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：332.66 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：117.52 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：322.92 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：120.39 Kbytes 页数：9 Pages

SIEMENS

西门子

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

• VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE/Crss RATIO INDUSTRIAL APPLICATIONS: • AUTOMATIVE POWER ACTUATORS

文件：389.24 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体