30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

文件：81.79 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

文件：45.53 Kbytes 页数：6 Pages

INTERSIL

High input impedance

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) • SOA is Power Dissipation Limited • High input impedance APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bip

文件：66.13 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor control and drive · Battery management · Genaral Power Switching

文件：334.8 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET??MOSFET

N - CHANNEL50V - 0.03Q - 33A TO-220 STripFET™ MOSFET ■ TYPICAL Ros(on) = 0.03Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID ANDRELAY DRIVERS ■ REGULATORS ■ DC-DC &

文件：131.34 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：120.49 Kbytes 页数：9 Pages

SIEMENS

西门子

N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

■ TYPICAL RDS(on) = 0.03 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC

文件：80.39 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Power MOSFET 50V, 30A, 40 m廓

文件：323.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SIPMOS짰 Power Transistor

SIPMOS Power Transistor Product Summary Drain source voltage VDS 55V Drain-Source on-state resistance RDS(on) 0.01Ω Continuous drain current ID 80A Features • N channel • Enhancement mode • Avalanche rated • dv/dtrated • 175 ˚C operating temperature

文件：139.69 Kbytes 页数：8 Pages

INFINEON

英飞凌