BUZ102

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

•Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •Lowon-resistance •175°Coperatingtemperature •alsoinTO-220SMDavailable

BUZ102

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=42A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

BUZ102AL

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)

•Nchannel •Enhancementmode •Avalanche-rated •LogicLevel •dv/dtrated •Lowon-resistance •175°Coperatingtemperature •alsoinTO-220SMDavailable

BUZ102S

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

BUZ102SE3045

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

BUZ102SE3045A

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

BUZ102SL

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

•Nchannel •Enhancementmode •LogicLevel •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

BUZ102SL-4

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

•Quad-channel •Enhancementmode •Logiclevel •Avalanche-rated •dv/dtrated

BUZ102S

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

102

0.5/2.5GHzUHFLOBUFFERAMPLIFIER

DESCRIPTION TheSTB7102,STB7103andSTB7104designedforMobilePhoneapplications(0.1/2.5GHz),areanhighisolationSiMMICBufferAmplifiers.ManufacturedinthethirdgenerationofSTproprietarybipolarprocess,theyoffersanexcellentisolationandagoodlinearityusingalowcurrentco

102

0.1/2.5GHzSiMMICBUFFERAMPLIFIERS

DESCRIPTION TheSTB7102,STB7103andSTB7104designedforMobilePhoneapplications(0.1/2.5GHz),areanhighisolationSiMMICBufferAmplifiers.ManufacturedinthethirdgenerationofSTproprietarybipolarprocess,theyoffersanexcellentisolationandagoodlinearityusingalowcurrentco

102

PrecisionWirewoundResistors

100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst

102

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

102

Detailscompletssurlesitedufabricant:

ProductDescription Fulldetailsonthemanufacturerswebsite: IDEALINDUSTRIES,INC

102

PrecisionWirewoundResistors

102

POWERINDUCTOR

●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc

102

WIREWOUNDSMDINDUCTOR

●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer

102

CustomerSpecification

Construction Diameters(In) 1)Component15X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1BLACK3 GREEN/YELLOW 5WHITE 2BLUE4BROWN 2)CableAssembly5ComponentsCabled a)Twists:6.4

102

CustomerSpecification

Construction Diameters(In) 1)Component15X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1BLACK3 GREEN/YELLOW 5WHITE 2BLUE4BROWN 2)CableAssembly5ComponentsCabled a)Twists:6.4

102A

3-PhaseVoltage/PhaseMonitor