丝印：BUK9277-55A；Package：SOT428；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Q10

文件：748.03 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：354.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

文件：104.39 Kbytes 页数：12 Pages

恩XP

TrenchMOS logic level FET

文件：319.45 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

文件：299.19 Kbytes 页数：13 Pages

PHI

PHI

BUK9277-55A - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·Q101 compliant\n·Suitable for logic level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS DPAK

Nexperia USA Inc.