Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS DPAK

Nexperia USA Inc.

N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Q10

文件：748.03 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Q10

文件：748.03 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：354.06 Kbytes 页数：2 Pages

ISC

无锡固电