PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes

GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and acti

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PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes

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