丝印：BUK9214-30A；Package：SOT428；N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

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TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9214-30A in SOT428 (D-PAK). Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rat

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N-channel TrenchMOS logic level FET

文件：197.95 Kbytes 页数：14 Pages

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BUK9214-30A - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for logic level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

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