Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.

文件：81.43 Kbytes 页数：8 Pages

PHI

PHI

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

文件：95.59 Kbytes 页数：8 Pages

PHI

PHI

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

恩XP

D2PAK

NEXPERIA

安世

上传：万三科技(深圳)有限公司

SOT223

NEXPERIA

安世

上传：深圳市祥瑞智科技有限公司