BUK9107-55ATE中文资料下载库存现货安世-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BUK9107-55ATE	文件：370.52 Kbytes Page：16 Pages	N-channel TrenchPLUS logic level FET 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified 文件：370.52 Kbytes 页数：16 Pages	NEXPERIA 安世	NEXPERIA
BUK9107-55ATE	文件：256.22 Kbytes Page：15 Pages	N-channel TrenchPLUS logic level FET 文件：256.22 Kbytes 页数：15 Pages	恩XP	恩XP
BUK9107-55ATE_15	文件：256.22 Kbytes Page：15 Pages	N-channel TrenchPLUS logic level FET 文件：256.22 Kbytes 页数：15 Pages	PHI PHI	PHI
BUK9107-55ATE	文件：300 bytes Page：1 Pages	N-channel TrenchPLUS logic level FET Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standa	Nexperia 安世	Nexperia

更多BUK9107-55ATE供应商更新时间2026-2-6 16:30:00